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HYB39S16160CT-6 - 1M x 16 MBit Synchronous DRAM

The HYB39S16160CT-6 by Siemens Semiconductor is a 1M x 16 MBit Synchronous DRAM. Below is the official datasheet preview.

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Official preview page of the HYB39S16160CT-6 1M x 16 MBit Synchronous DRAM datasheet (Siemens Semiconductor).

Datasheet Details

Part number HYB39S16160CT-6
Manufacturer Siemens Semiconductor
File Size 173.11 KB
Description 1M x 16 MBit Synchronous DRAM
Datasheet download datasheet HYB39S16160CT-6_SiemensSemiconductor.pdf
Additional preview pages of the HYB39S16160CT-6 datasheet.

HYB39S16160CT-6 Product details

Description

LVTTL-version: HYB 39S16160CT-6 HYB 39S16160CT-7 P-TSOPII-50 (400mil) P-TSOPII-50 (400mil) 166MHz 2B x 512k x 16 SDRAM 143MHz 2B x 512k x 16 SDRAM Pin Description and Pinouts: CLK CKE CS RAS CAS WE A0-A10 A11 (BS) Clock Input Clock Enable Chip Select Row Address Strobe Column Address Strobe Write Enable Address Inputs Bank Select DQ LDQM, UDQM Vdd Vss Vddq Vssq NC Data Input /Output Data Mask Power (+3.3V) Ground Power for DQ’s (+ 3.3V) Ground for DQ’s not connected Pin-Out Vdd DQ0 DQ1 Vssq

Features

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