Description
VDD VSS VDDQ VSSQ
NC
Semiconductor Group
2
1998-10-01
HYB 39S16400/800/160AT-8/-10 www.DataSheet4U.com 16 MBit Synchronous DRAM
VDD DQ0 VSSQ DQ1 VDDQ DQ2 VSSQ DQ3 VDDQ N.C.N.C.WE CAS RAS CS A11 A10 A0 A1 A2 A3 VDD
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22
44 43 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23
SPP03402
VSS DQ7 VSSQ DQ6 VDDQ DQ5 VSSQ DQ4 VDDQ N.C.N.C.DQM CLK CKE N.C.A9 A8 A7 A6 A5 A4 VSS
Pin Configuration
Semiconductor Group
3
1998-10-01.
Features
- e Register For application flexibility, a CAS latency, a burst length, and a burst sequence can be progr.
