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Siemens Electronic Components Datasheet

SXTA92 Datasheet

(SXTA92 / SXTA93) PNP Silicon High Voltage Transistors

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PNP Silicon High Voltage Transistors
q High breakdown voltage
q Low collector-emitter saturation voltage
SXTA 92
SXTA 93
Type
SXTA 92
SXTA 93
Marking
2D
2E
Ordering Code
(tape and reel)
Q68000-A8393
Q68000-A8651
Pin Configuration
123
BCE
Package1)
SOT-89
Maximum Ratings
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Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
Collector current
Total power dissipation, TS = 130 ˚C
Junction temperature
Storage temperature range
Thermal Resistance
Junction - ambient2)
Junction - soldering point
Symbol
Values
SXTA 92 SXTA 93
VCE0
300
200
VCB0
300
200
VEB0
5
IC 500
Ptot 1
Tj 150
Tstg – 65 … + 150
Unit
V
mA
W
˚C
Rth JA
Rth JS
75 K/W
20
1) For detailed information see chapter Package Outlines.
2) Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91



Siemens Electronic Components Datasheet

SXTA92 Datasheet

(SXTA92 / SXTA93) PNP Silicon High Voltage Transistors

No Preview Available !

SXTA 92
SXTA 93
Electrical Characteristics
at TA = 25 ˚C, unless otherwise specified.
Parameter
DC characteristics
Collector-emitter breakdown voltage
IC = 1 mA
SXTA 92
SXTA 93
Collector-base breakdown voltage
IC = 100 µA
SXTA 92
SXTA 93
Emitter-base breakdown voltage
IE = 100 µA
Collector-base cutoff current
VCB = 200 V, IE = 0
VCB = 160 V, IE = 0
VCB = 200 V, IE = 0, TA = 125 ˚C
VCB = 160 V, IE = 0, TA = 125 ˚C
SXTA 92
SXTA 93
SXTA 92
SXTA 93
Emitter-base cutoff current
VEB = 4 V, IC = 0
DC current gain
IC = 1 mA, VCE = 10 V
IC = 10 mA, VCE = 10 V
IC = 30 mA, VCE = 10 V
SXTA 92
SXTA 93
Collector-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
SXTA 92
SXTA 93
Base-emitter saturation voltage1)
IC = 20 mA, IB = 2 mA
AC characteristics
Transition frequency
IC = 10 mA, VCE = 20 V, f = 100 MHz
Output capacitance
VCB = 20 V, f = 1 MHz
SXTA 92
SXTA 93
Symbol
Values
Unit
min. typ. max.
V(BR)CE0
V(BR)CB0
V(BR)EB0
300
200
300
200
5
ICB0
––
––
––
––
IEB0 – –
hFE
VCEsat
VBEsat
25
40
25
25
V
250 nA
250 nA
20 µA
20 µA
100 nA
V
0.5
0.4
0.9
fT 50 – – MHz
Cobo
pF
––6
––8
1) Pulse test conditions: t 300 µs, D 2 %.
Semiconductor Group
2


Part Number SXTA92
Description (SXTA92 / SXTA93) PNP Silicon High Voltage Transistors
Maker Siemens Semiconductor
Total Page 4 Pages
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