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Siemens Electronic Components Datasheet

BAS40 Datasheet

HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection)

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HiRel Silicon Schottky Diode
Features
¥ HiRel Discrete and Microwave Semiconductor
¥ General-purpose diodes for high-speed switching
¥ Circuit protection
¥ Voltage clamping
¥ High-level detecting and mixing
¥ Hermetically sealed microwave package
¥ ESA Qualification pending
T1
BAS 40
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type
BAS40-T1 (ql)
Marking Ordering Code
- see below
Pin Configuration
Package
T1
(ql) Quality Level: P: Professional Quality, Ordering Code: Q62702A1176
H: High Rel Quality,
Ordering Code: on request
S: Space Quality,
Ordering Code: on request
(see Chapter Order Instructions for ordering example)
Table 1
Maximum Ratings
Parameter
Reverse voltage
Forward current
Surge forward current 1)
Power dissipation
Operating temperature range
Storage temperature range
Soldering temperature
Junction temperature
Thermal resistance junction-case
1) t £ 10 ms, duty cycle = 10%
Symbol
VR
IF
IFSM
Ptot
Top
Tstg
Tsol
Tj
Rth(j-c)
Limit Values
40
120
170
250
- 55 to + 150
- 65 to + 150
+ 250
150
100
Unit
V
mA
mA
mW
°C
°C
°C
°C
K/W
Semiconductor Group 1 Draft A03 1998-04-01



Siemens Electronic Components Datasheet

BAS40 Datasheet

HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection)

No Preview Available !

BAS 40
Electrical Characteristics
Table 2
DC Characteristics at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
min. typ.
max.
Reverse current 1, VR = 40 V
Reverse current 2, VR = 30 V
Forward voltage 1, IF1 = 1 mA
Forward voltage 2, IF2 = 10 mA
Forward voltage 3, IF3 = 40 mA
Differential forward resistance 2)
IF2 = 10 mA, IF3 = 15 mA
IR1
IR2
VF1
VF2
VF3
RFD
- - 10
--1
0.29 0.33 0.39
0.42 0.45 0.54
0.68 0.7
0.85
7.5 10
11.5
2)
RFD
=
------D----V----F-------
5 ´ 10Ð3
W
Table 3
AC Characteristics at TA = 25 °C unless otherwise specified
Parameter
Symbol
Limit Values
min. typ.
max.
Total capacitance,
VR = 0 V, f = 1 MHz
CT 2.2 2.9 5.0
Unit
mA
mA
V
V
V
W
Unit
pF
Semiconductor Group 2 Draft A03 1998-04-01


Part Number BAS40
Description HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection)
Maker Siemens Semiconductor Group
Total Page 4 Pages
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