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BPX89 - NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays

Description

Betriebs- und Lagertemperatur Operating and storage temperature range Löttemperatur bei Tauchlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t ≤ 3 s Dip soldering temperature ≥ 2 mm distance from case bottom, soldering time t ≤ 3 s Löttemperatur bei Kolbenlötung Lötstelle ≥ 2 mm vom Gehäuse, Lötzeit t

Features

  • q Especially suitable for.

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BPX 80 BPX 82 ... 89 NPN-Silizium-Fototransistor Zeilen Silicon NPN Phototransistor Arrays BPX 80 BPX 82 ... 89 Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified.
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