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Siemens Electronic Components Datasheet

BSS123 Datasheet

Small-Signal Transistor

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BSS 123
SIPMOS ® Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• VGS(th) = 0.8...2.0V
Type
BSS 123
Type
BSS 123
BSS 123
VDS
100 V
ID
0.17 A
Ordering Code
Q62702-S512
Q67000-S245
Pin 1
G
Pin 2
S
RDS(on)
6
Package
SOT-23
Tape and Reel Information
E6327
E6433
Marking
SAs
Pin 3
D
Maximum Ratings
Parameter
Drain source voltage
Drain-gate voltage
RGS = 20 k
Gate source voltage
Gate-source peak voltage,aperiodic
Continuous drain current
TA = 28 °C
DC drain current, pulsed
TA = 25 °C
Power dissipation
TA = 25 °C
Symbol
VDS
VDGR
VGS
Vgs
ID
IDpuls
Ptot
Values
100
100
± 14
± 20
0.17
0.68
0.36
Unit
V
A
W
Semiconductor Group
1
Sep-13-1996



Siemens Electronic Components Datasheet

BSS123 Datasheet

Small-Signal Transistor

No Preview Available !

BSS 123
Maximum Ratings
Parameter
Symbol
Chip or operating temperature
Tj
Storage temperature
Tstg
Thermal resistance, chip to ambient air
RthJA
Therminal resistance, chip-substrate- reverse side 1)RthJSR
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Values
Unit
-55 ... + 150 °C
-55 ... + 150
350
K/W
285
E
55 / 150 / 56
1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Unit
Static Characteristics
Drain- source breakdown voltage
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold voltage
VGS=VDS, ID = 1 mA
Zero gate voltage drain current
VDS = 100 V, VGS = 0 V, Tj = 25 °C
VDS = 100 V, VGS = 0 V, Tj = 125 °C
VDS = 60 V, VGS = 0 V, Tj = 25 °C
Gate-source leakage current
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
VGS = 10 V, ID = 0.17 A
VGS = 4.5 V, ID = 0.17 A
V(BR)DSS
100
VGS(th)
0.8
IDSS
IGSS
RDS(on)
-
-
-
-
-
-
1.5
0.1
2
10
3
4.5
-
2
1
60
50
6
10
V
µA
nA
Semiconductor Group
2
Sep-13-1996


Part Number BSS123
Description Small-Signal Transistor
Maker Siemens Semiconductor Group
Total Page 8 Pages
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