HYB3116400BJ-50
Description
DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) LP-DRAM (access time 50 ns) LP-DRAM (access time 60 ns) LP-DRAM (access time 70 ns) Semiconductor Group 2 HYB 3116(7)400BJ/BT(L) -50/-60/-70 3.3V 4Mx4-DRAM Vcc I/O1 I/O2 WE RAS N.C.
