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HYB3116400BJ-70 - 3.3V 4M x 4-Bit Dynamic RAM

General Description

DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns) DRAM (access time 50 ns) DRAM (access time 60 ns) DRAM (access time 70 ns)

Key Features

  • include single + 3.3 V (± 0.3 V) power supply, direct interfacing with high-performance logic device families. The HYB3116400BTL parts have a very low power „sleep mode“ supported by Self Refresh. Ordering Information Type HYB 3117400BJ-50 HYB 3117400BJ-60 HYB 3117400BJ-70 HYB 3117400BT-50 HYB 3117400BT-60 HYB 3117400BT-70 HYB 3116400BJ-50 HYB 3116400BJ-60 HYB 3116400BJ-70 HYB 3116400BT-50 HYB 3116400BT-60 HYB 3116400BT-70 HYB 3116400BTL-50 HYB 3116400BTL-60 HYB 3116400BTL-70 Ordering Code Pac.

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Other Datasheets by Siemens Semiconductor Group (now Infineon)

Part Number Description
HYB3116400BJ-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB3116400BJ-60 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BT-50 4M x 4-Bit Dynamic RAM 2k & 4k Refresh
HYB3116400BT-60 3.3V 4M x 4-Bit Dynamic RAM
HYB3116400BT-70 3.3V 4M x 4-Bit Dynamic RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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3.3V 4M x 4-Bit Dynamic RAM HYB3116400BJ/BT(L) -50/-60/-70 HYB3117400BJ/BT(L) -50/-60/-70 Advanced Information • • • 4 194 304 words by 4-bit organization 0 to 70 °C operating temperature Performance: -50 tRAC tCAC tAA tRC tPC RAS access time CAS access time Access time from address Read/Write cycle time Fast page mode cycle time 50 13 25 90 35 -60 60 15 30 110 40 -70 70 20 35 130 45 ns ns ns ns ns • • • • • • • • Single + 3.3 V (± 0.3V ) supply Low power dissipation max. 396 active mW (HYB3117400BJ/BT-50) max. 363 active mW (HYB3117400BJ/BT-60) max. 330 active mW (HYB3117400BJ/BT-70) max. 360 active mW (HYB3116400BJ/BT-50) max. 324 active mW (HYB3116400BJ/BT-60) max. 288 active mW (HYB3116400BJ/BT-70) 7.2 mW standby (LV-TTL) 3.