Q62702-A771
Silicon Switching Diodes
BAW 79 A … BAW 79 D
For high-speed switching q High breakdown voltage q mon cathode q
Type BAW 79 A BAW 79 B BAW 79 C BAW 79 D
Marking GE GF GG GH
Ordering Code (tape and reel) Q62702-A781 Q62702-A782 Q62702-A771 Q62702-A733
Pin Configuration
Package1) SOT-89
Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current t = 1 µs Total power dissipation TS = 115 ˚C Junction temperature Symbol BAW VR VRM IF IFM IFS Ptot Tj 50 50 Values BAW BAW 100 100 1 1 10 1 150
- 65 … + 150 W ˚C 200 200 Unit BAW 400 400 A V
Storage temperature range Tstg Thermal Resistance Junction
- ambient2) Junction
- soldering point Rth JA Rth JS
≤ ≤
175 35
K/W
1) 2)
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
BAW 79 A … BAW 79 D
Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise...
