• Part: Q62702-B0911
  • Description: Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance)
  • Category: Diode
  • Manufacturer: Siemens Semiconductor Group
  • Size: 12.80 KB
Download Q62702-B0911 Datasheet PDF
Siemens Semiconductor Group
Q62702-B0911
Q62702-B0911 is Silicon Tuning Diode (Excellent linearity High Q hyperabrupt tuning diode Low series inductance) manufactured by Siemens Semiconductor Group.
BBY 55-03W Silicon Tuning Diode Preliminary data - Excellent linearity - High Q hyperabrupt tuning diode - Low series inductance - Designed for low tuning voltage operation for VCO’s in mobile munications equipment - Very low capacitance spread VPS05176 Type BBY 55-03W Marking Ordering Code 7 white Q62702-B0911 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Forward current Operating temperature range Storage temperature Symbol Value 16 20 -55 ...+150 -55 ...+150 Unit V m A °C VR IF T op T stg Semiconductor Group Semiconductor Group Apr-30-1998 1998-11-01 BBY 55-03W Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Reverse current Symbol min. Values typ. max. 3 100 n A Unit IR IR - VR = 15 V Reverse current VR = 15 V, TA = 65 °C AC characteristics Diode capacitance 14 10 5.5 15 11 6 2.5 0.15 0.09 0.6 16 12 6.5 3 0.35 - p F VR = 2 V, f = 1 MHz VR = 4 V, f = 1 MHz VR = 10 V, f = 1 MHz Capacitance ratio CT2/CT10 rs CC Ls - Ω p F n H VR = 2 V, VR = 10 V, f = 1 MHz Series resistance VR = 5 V, f = 470 MHz Case capacitance f = 1 MHz Series inductance Semiconductor Group Semiconductor...