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SFH325 - NPN-Silizium-Fototransistor im SMT SIDELEDa-Gehause Silicon NPN Phototransistor in SMT SIDELEDa-Package

General Description

Betriebs- und Lagertemperatur Operating and storage temperature range Kollektor-Emitterspannung Collector-emitter voltage Kollektorstrom Collector current Kollektorspitzenstrom, τ < 10 µs Collector surge current Verlustleistung, TA = 25 °C Total power dissipation Wärmewiderstand für Montage auf PC-B

Key Features

  • q Especially suitable for.

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Full PDF Text Transcription (Reference)

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SFH 325 SFH 325 FA NPN-Silizium-Fototransistor im SMT SIDELED®-Gehäuse Silicon NPN Phototransistor in SMT SIDELED®-Package SFH 325 SFH 325 FA Maße in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Speziell geeignet für Anwendungen im Features q Especially suitable for applications from q q q q Bereich von 380 nm bis 1150 nm (SFH 325) und bei 880 nm (SFH 325 FA) Hohe Linearität P-LCC-2 Gehäuse Gruppiert lieferbar nur für Reflow IR-Lötung geeignet. Bei Schwallötung wenden Sie sich bitte an uns. q q q q 380 nm to 1150 nm (SFH 325) and of 880 nm (SFH 325 FA) High linearity P-LCC-2 package Available in groups Suitable only for reflow IR soldering. In case of dip soldering, please contact us first.