SBD10C45MJ Datasheet | Silan Microelectronics

DESCRIPTION SBD10C45T/F/MJ is schottky rectifier fabricated in silicon epitaxial planar technology, Guard ring construction for over voltage protection and enhanced long term reliability. Typical applications are in switching power supplies, converter, free-wheeling diodes, and reverse battery protection. FEATURES - Guard ring for Stress Protection - High Surge Capacity - Low power loss , high efficiency - Low Forward Voltage Drop - 150C Operating Junction Temperature ORDERING INFORMATION Part No. SBD10C45T SBD10C45F SBD10C45MJ SBD10C45T Package TO-220-3L TO-220F-3L TO-251J-3L TO-220HW-3L Marking SBD10C45T SBD10C45F SBD10C45MJ SBD10C45T Hazardous Substance Control Pb free Pb free Halogen free Pb free Packing Tube Tube Tube Tube ABSOLUTE MAXIMUM RATINGS (unless otherwise noted, TC=25C) Characteristics Maximum Repetitive Peak Reverse Voltage Average Forward Rectified Current Peak Forward Surge Current@8.3ms Operation Junction Temperature Range(Note 1) Storage Temperature Range Symbol VRRM IFAV IFSM TJ TSTG Value 45 10 120 -55~150 -55~150 Note 1: d Ptot  1 condition to avoid thermal runaway for a diode on its own heatsink. d Tj Rth(j - a) Unit V A A C C ERMAL CHARACTERISTICS Characteristics Thermal Resistance, Junction-to-Case(TO-220-3LTO-220HW-3L) Symbol RθJC Value 2.0 Unit C/W HANGZHOU SILAN MICROELECTRONICS CO.,LTD http: //.silan..cn Rev.:2.1 Page 1 of 6 SBD10C45T/F/MJ_Datasheet ELECTRICAL CHARACTERISTICS Characteristics Forward voltage Reverse current Symbol...