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SGM75HF12A1TFD - 1200V IGBT MODULE

Description

SGM75HF12A1TFD Module offers the optimum performance for UPS, AC inverter drive and electronic welders.

Features

  • 75A, 1200V, VCE(sat)(typ. ) =2.2V@IC=75A.
  • VCE(sat) with positive temperature coefficient.
  • High short circuit capability.
  • Low switching loss.
  • Isolated copper baseplate using DBC technology A1.

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Datasheet Details

Part number SGM75HF12A1TFD
Manufacturer Silan Microelectronics
File Size 266.08 KB
Description 1200V IGBT MODULE
Datasheet download datasheet SGM75HF12A1TFD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SGM75HF12A1TFD_Datasheet 75A, 1200V IGBT MODULE DESCRIPTION SGM75HF12A1TFD Module offers the optimum performance for UPS, AC inverter drive and electronic welders. FEATURES  75A, 1200V, VCE(sat)(typ.) =2.2V@IC=75A  VCE(sat) with positive temperature coefficient  High short circuit capability  Low switching loss  Isolated copper baseplate using DBC technology A1 NOMENCLATURE SGM75HF12A1TFD IGBT Module Series Nominal Current: e.g. 75=75A Feature and grade: TF short switching time; D- industrial grade Package Type: Cu Base, DBC, 94mm×34mm×30mm Circuit Configuration: Half Bridge Voltage: e.g. 12=1200V ORDERING INFORMATION Part No.
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