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Silan Microelectronics

SVD1N60BTR Datasheet Preview

SVD1N60BTR Datasheet

600V N-CHANNEL MOSFET

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SVD1N60M/T/B/D_Datasheet
1A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVD1N60M/T/B/D is an N-channel enhancement mode power
MOS field effect transistor which is produced using Silan
proprietary S-RinTM structure VDMOS technology. The improved
planar stripe cell and the improved guard ring terminal have been
especially tailored to minimize on-state resistance, provide superior
switching performance, and withstand high energy pulse in the
avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
1A,600V,RDS(on)typ.=8.6Ω@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVD1N60M
SVD1N60M
SVD1N60T
SVD1N60B
SVD1N60BTR
SVD1N60D
SVD1N60DTR
Package
TO-251-3L
TO-251D-3L
TO-220-3L
TO-92-3L
TO-92-3L
TO-252-2L
TO-252-2L
Marking
SVD1N60M
SVD1N60M
SVD1N60T
1N60B
1N60B
SVD1N60D
SVD1N60D
Material
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
Bulk
AMMO
Tube
Tape & Reel
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.4
2011.06.28
Page 1 of 10




Silan Microelectronics

SVD1N60BTR Datasheet Preview

SVD1N60BTR Datasheet

600V N-CHANNEL MOSFET

No Preview Available !

SVD1N60M/T/B/D_Datasheet
ABSOLUTE MAXIMUM RATINGS (Tc=25°C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
Power Dissipation(TC=25°C)
-Derate above 25°C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Rating
SVD1N60M/D SVD1N60T SVD1N60B
600
±30
1.0
4.0
28 41 9
0.22 0.33 0.072
47
-55+150
-55+150
Unit
V
V
A
A
W
W/°C
mJ
°C
°C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
SVD1N60M/D
4.55
110
Rating
SVD1N60T
3.03
62.5
SVD1N60B
13.9
120
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Tc=25°C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source On State
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
RDS(on)
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
VGS=10V, ID=0.5 A
VDS=25V,VGS=0V,
f=1.0MHZ
VDD=300V,ID=1.0A,
RG=25Ω
(Note 2,3)
VDS=480V,ID=1.0A,
VGS=10V
(Note 2,3)
Min.
600
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
8.6
156
16
1.0
8.7
9.9
36
9.0
5.2
1.2
2.1
Max.
--
1.0
±100
4.0
11
170
25
4.5
24
52
50
64
6.2
--
--
Unit
V
µA
nA
V
Ω
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
Http://www.silan.com.cn
REV:1.4
2011.06.28
Page 2 of 10


Part Number SVD1N60BTR
Description 600V N-CHANNEL MOSFET
Maker Silan Microelectronics
Total Page 10 Pages
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