SVD1N60M 600V N-CHANNEL MOSFET

Silan Microelectronics

Description

SVD1N60M/T/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL .
SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS.

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Datasheet Specifications

Part number: SVD1N60M
Manufacturer: Silan Microelectronics
File Size: 526.39 KB
Datasheet: SVD1N60M-SilanMicroelectronics.pdf
Description: 600V N-CHANNEL MOSFET

Features

* ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ. ）=8.6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No. SVD1N60M SVD1N60M SVD1N60T SVD1N60B SVD1N60BTR SVD1N60D SVD1N60DTR Package TO-251-3L TO-251D-3L TO-220-3L TO-92-3L TO-92-3L TO-252-2L TO-252-2L

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SVD1N60M 600V N-CHANNEL MOSFET Silan Microelectronics

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