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SVD1N60T Datasheet 600V N-CHANNEL MOSFET

Manufacturer: Silan Microelectronics

Download the SVD1N60T datasheet PDF. This datasheet also includes the SVD1N60M variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SVD1N60M-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVD1N60T
Manufacturer Silan Microelectronics
File Size 526.39 KB
Description 600V N-CHANNEL MOSFET
Download SVD1N60T Download (PDF)

General Description

SVD1N60M/T/B/D is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers.

Overview

SVD1N60M/T/B/D_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL.

Key Features

  • ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)(typ. )=8.6Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.