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SVD2N70T - 700V N-CHANNEL MOSFET

This page provides the datasheet information for the SVD2N70T, a member of the SVD2N70M 700V N-CHANNEL MOSFET family.

Datasheet Summary

Description

structure VDMOS technology.

Features

  • ∗ ∗ ∗ ∗ ∗ 2A,700V, RDS(on) (typ)=5.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

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Datasheet Details

Part number SVD2N70T
Manufacturer Silan Microelectronics
File Size 740.59 KB
Description 700V N-CHANNEL MOSFET
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Full PDF Text Transcription

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SVD2N70M/F/T_Datasheet 2A, 700V N-CHANNEL MOSFET GENERAL DESCRIPTION SVD2N70M/F/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-Rin TM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES ∗ ∗ ∗ ∗ ∗ 2A,700V, RDS(on) (typ)=5.5Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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