| Description | SVD640T/D/S is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary S-RinTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used... |
| Features |
18A,200V,RDS(on)(typ.)=0.12@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
1 23
TO-220-3L
1 3
TO-252-2L
ORDERING INFORMATION
Part No. SVD640T SVD640D SVD640DTR SVD640S SVD640STR
Package TO-220-3L TO-252-2L TO-252-2L TO-263-2L TO-263-2L
Marking SVD640T SVD640D SVD640D SVD640S SVD640S
Hazardous Substance C...
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| Datasheet |
 SVD640S Datasheet - 363.68KB |
