SVF10N70FJ
Description
SVF10N70F/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Key Features
- Example: F:TO-220F Nominal Voltage,using 2 digits Example: 60 denotes 600V, 65 denotes 650V
- Special Features indication, May be omitted
- Example: E denotes embeded ESD structure
