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Silan Microelectronics

SVF12N60CF Datasheet Preview

SVF12N60CF Datasheet

600V N-CHANNEL MOSFET

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SVF12N60CF_Datasheet
12A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF12N60CF is an N-channel enhancement mode power MOS field
effect transistor which is produced using Silan proprietary F-CellTM
structure VDMOS technology. The improved process and cell
structure have been especially tailored to minimize on-state
resistance, provide superior switching performance, and withstand
high energy pulse in the avalanche and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
12A,600V,RDS(on)(typ.)=0.58@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF12N60CF
Package
TO-220F-3L
Marking
SVF12N60CF
Hazardous
Substance Control
Halogen free
Packing
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 1 of 7




Silan Microelectronics

SVF12N60CF Datasheet Preview

SVF12N60CF Datasheet

600V N-CHANNEL MOSFET

No Preview Available !

SVF12N60CF_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25°C
TC=100°C
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy (Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Ratings
600
±30
12
7.6
48
51
0.41
798
-55+150
-55+150
Unit
V
V
A
A
W
W/C
mJ
C
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
2.44
62.5
Unit
C/W
C/W
ELECTRICAL CHARACTERISTICS (TC=25C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
Min.
600
--
--
2.0
RDS(on)
VGS=10V, ID=6.0A
--
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V,VGS=0V,
f=1.0MHz
VDD=300V,ID=12A,
VGS=10V ,RG=24
(Note 2,3)
VDS=480V, ID=12A, VGS=10V
(Note 2,3)
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
Max.
--
1.0
±100
4.0
0.58 0.75
1367
152
14.0
24.33
51.93
87.93
47.73
33..5
7.57
15.2
--
--
--
--
--
--
--
--
--
--
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.3
Page 2 of 7


Part Number SVF12N60CF
Description 600V N-CHANNEL MOSFET
Maker Silan Microelectronics
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