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SVF18N50FJ - 500V N-CHANNEL MOSFET

Download the SVF18N50FJ datasheet PDF. This datasheet also covers the SVF18N50F variant, as both devices belong to the same 500v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 18A,500V,RDS(on)(typ. )=0.26@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF18N50F-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF18N50FJ
Manufacturer Silan Microelectronics
File Size 515.21 KB
Description 500V N-CHANNEL MOSFET
Datasheet download datasheet SVF18N50FJ Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVF18N50F/T/PN/FJ_Datasheet 18A, 500V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF18N50F/T/PN/FJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  18A,500V,RDS(on)(typ.)=0.26@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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