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SVF1N60H Datasheet 600V N-CHANNEL MOSFET

Manufacturer: Silan Microelectronics

Download the SVF1N60H datasheet PDF. This datasheet also includes the SVF1N60AM variant, as both parts are published together in a single manufacturer document.

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Note: The manufacturer provides a single datasheet file (SVF1N60AM-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF1N60H
Manufacturer Silan Microelectronics
File Size 469.44 KB
Description 600V N-CHANNEL MOSFET
Download SVF1N60H Download (PDF)

General Description

SVF1N60AM/MJ/B/D/F/H is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology.

The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices are widely used in AC-DC power suppliers, DCDC converters and H-bridge PWM motor drivers.

Overview

SVF1N60AM/MJ/B/D/F/H_Datasheet 1A, 600V N-CHANNEL MOSFET GENERAL.

Key Features

  • ∗ ∗ ∗ ∗ ∗ 1A,600V,RDS(on)（typ. ）=6.8Ω@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability.

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