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Silan Microelectronics

SVF2N65CD Datasheet Preview

SVF2N65CD Datasheet

650V N-CHANNEL MOSFET

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SVF2N65CF/M/MJ/D/NF_Datasheet
2A, 650V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF2N65CF/M/MJ/D/NF is an N-channel enhancement mode
power MOS field effect transistor which is produced using Silan
proprietary F-CellTM high-voltage planar VDMOS technology. The
improved process and cell structure have been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power suppliers, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
2A,650V, RDS(on)(typ.)=4.3@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF2N65CF
SVF2N65CM
SVF2N65CMJ
SVF2N65CD
SVF2N65CDTR
SVF2N65CNF
Package
TO-220F-3L
TO-251D-3L
TO-251J-3L
TO-252-2L
TO-252-2L
TO-126F-3L
Marking
SVF2N65CF
SVF2N65C
SVF2N65C
SVF2N65CD
SVF2N65CD
SVF2N65CNF
Hazardous
Substance Control
Halogen free
Halogen free
Halogen free
Halogen free
Halogen free
Pb free
Packing
Tube
Tube
Tube
Tube
Tape & Reel
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6
Page 1 of 10




Silan Microelectronics

SVF2N65CD Datasheet Preview

SVF2N65CD Datasheet

650V N-CHANNEL MOSFET

No Preview Available !

SVF2N65CF/M/MJ/D/NF_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25C
TC=100C
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVF2N
65CF
25
0.20
Ratings
SVF2N
65CM/D
SVF2N
65CMJ
650
±30
2.0
1.3
8.0
35 38
0.28 0.30
108
-55+150
-55+150
SVF2N
65CNF
16
0.13
Unit
V
V
A
A
W
W/C
mJ
C
C
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJC
RθJA
SVF2N
65CF
5.0
62.5
Ratings
SVF2N
SVF2N
65CM/D
65CMJ
3.57 3.29
62.0 62.0
SVF2N
65CNF
7.81
62.5
Unit
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=650V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=1.0A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V, VGS=0V,
f=1.0MHZ
VDD=325V, RG=25Ω,
ID=2.0A
(Note 2,3)
VDS=520V, ID=2.0A,
VGS=10V
(Note 2,3)
Min.
650
--
--
2.0
--
--
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
4.3
255
34
2.2
8.4
20.4
15.1
24
8.2
2.72
3.37
Max.
--
1.0
±100
4.0
5
--
--
--
--
--
--
--
--
--
--
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.6
Page 2 of 10


Part Number SVF2N65CD
Description 650V N-CHANNEL MOSFET
Maker Silan Microelectronics
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SVF2N65CD Datasheet PDF






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