Datasheet4U Logo Datasheet4U.com

SVF2N65CNF - 650V N-CHANNEL MOSFET

Download the SVF2N65CNF datasheet PDF. This datasheet also covers the SVF2N65CF variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF2N65CF/M/MJ/D/NF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 2A,650V, RDS(on)(typ. )=4.3@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF2N65CF-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF2N65CNF
Manufacturer Silan Microelectronics
File Size 378.15 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVF2N65CNF Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SVF2N65F 650V N-CHANNEL MOSFET SL
SVF2N65FG 650V N-CHANNEL MOSFET SL
SVF2N65MJ 650V N-CHANNEL MOSFET SL
SVF2N65N 650V N-CHANNEL MOSFET SL
SVF2N60C 600V N-CHANNEL MOSFET SL

Other Datasheets by Silan Microelectronics

Part Number Description
SVF2N65CD 650V N-CHANNEL MOSFET
SVF2N65CF 650V N-CHANNEL MOSFET
SVF2N65CM 650V N-CHANNEL MOSFET
SVF2N65CMJ 650V N-CHANNEL MOSFET
SVF2N65M MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVF2N65CF/M/MJ/D/NF_Datasheet 2A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF2N65CF/M/MJ/D/NF is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power suppliers, DC-DC converters and H-bridge PWM motor drivers. FEATURES  2A,650V, RDS(on)(typ.)=4.3@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No.
Published: |