Datasheet4U Logo Datasheet4U.com

SVF4N80K - 800V N-CHANNEL MOSFET

Download the SVF4N80K datasheet PDF. This datasheet also covers the SVF4N80F variant, as both devices belong to the same 800v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVF4N80F/D/MJ/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 4A,800V, RDS(on)(typ. )=3.3@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVF4N80F-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVF4N80K
Manufacturer Silan Microelectronics
File Size 687.94 KB
Description 800V N-CHANNEL MOSFET
Datasheet download datasheet SVF4N80K Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
SVF4N65CAD 650V N-CHANNEL MOSFET SL
SVF4N65CAF 650V N-CHANNEL MOSFET SL
SVF4N65CAK 650V N-CHANNEL MOSFET SL
SVF4N65CAM 650V N-CHANNEL MOSFET SL
SVF4N65CAMJ 650V N-CHANNEL MOSFET SL

Other Datasheets by Silan Microelectronics

Part Number Description
SVF4N80D 800V N-CHANNEL MOSFET
SVF4N80F 800V N-CHANNEL MOSFET
SVF4N80MJ 800V N-CHANNEL MOSFET
SVF4N150F 1500V N-CHANNEL MOSFET
SVF4N150P7 1500V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVF4N80F/D/MJ/K_Datasheet 4A, 800V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF4N80F/D/MJ/K is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  4A,800V, RDS(on)(typ.)=3.3@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
Published: |