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SVF7N60CF - 600V N-CHANNEL MOSFET

Description

SVF7N60CF/S/K/MJ/D/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 7A, 600V, RDS(on)（typ）=0.96@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

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Datasheet Details

Part number SVF7N60CF
Manufacturer Silan Microelectronics
File Size 952.04 KB
Description 600V N-CHANNEL MOSFET
Datasheet download datasheet SVF7N60CF Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SVF7N60CF/S/K/MJ/D/T_Datasheet 7A, 600V N-CHANNEL MOSFET GENERAL DESCRIPTION SVF7N60CF/S/K/MJ/D/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  7A, 600V, RDS(on)（typ）=0.96@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE ORDERING INFORMATION Part No.
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