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Silan Microelectronics

SVF7N60CT Datasheet Preview

SVF7N60CT Datasheet

600V N-CHANNEL MOSFET

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SVF7N60CF/S/K/MJ/D/T_Datasheet
7A, 600V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N60CF/S/K/MJ/D/T is an N-channel enhancement mode
power MOS field effect transistor which is produced using Silan
proprietary F-CellTM high-voltage planar VDMOS technology. The
improved process and cell structure have been especially tailored
to minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
7A, 600V, RDS(on)typ=0.96@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
Part No.
SVF7N60CF
SVF7N60CS
SVF7N60CSTR
SVF7N60CK
SVF7N60CMJ
SVF7N60CD
SVF7N60CDTR
SVF7N60CT
Package
TO-220F-3L
TO-263-2L
TO-263-2L
TO-262-3L
TO-251J-3L
TO-252-2L
TO-252-2L
TO-220-3L
Marking
SVF7N60CF
SVF7N60CS
SVF7N60CS
SVF7N60CK
SVF7N60C
SVF7N60C
SVF7N60C
SVF7N60CT
Hazardous Substance Control
Halogen free
Halogen free
Halogen free
Halogen free
Halogen free
Halogen free
Halogen free
Pb free
Packing
Tube
Tube
Tape & Reel
Tube
Tube
Tube
Tape & Reel
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.7
Page 1 of 10




Silan Microelectronics

SVF7N60CT Datasheet Preview

SVF7N60CT Datasheet

600V N-CHANNEL MOSFET

No Preview Available !

SVF7N60CF/S/K/MJ/D/T_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25C
TC=100C
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
Ratings
Unit
SVF7N6 SVF7N6 SVF7N6 SVF7N6 SVF7N6
0CF 0CS/K 0CMJ 0CD
0CT
600 V
±30 V
7.0
A
4.0
28 A
45 122 93
90 145 W
0.36 0.98 0.74 0.72 1.16 W/C
490 mJ
-55+150
C
-55+150
C
THERMAL CHARACTERISTICS
Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Symbol
RθJC
RθJA
Ratings
SVF7N60 SVF7N60 SVF7N60 SVF7N60 SVF7N60 Unit
CF
CS/K
CMJ
CD
CT
2.78 1.02 1.34 1.39 0.86 C/W
62.5 62.5 62.0 62.0 62.5 C/W
ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=600V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=3.5A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V, VGS=0V,
f=1.0MHZ
VDD=300V, ID=7.0A,
RG=25
(Note 2,3)
VDS=480V, ID=7.0A,
VGS=10V
(Note 2,3)
Min.
600
--
--
2.0
--
592
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
0.96
770
96
8.7
15.5
32.7
52.2
31.5
21.1
4.53
10.0
Max.
--
1.0
±100
4.0
1.2
1001
--
--
--
--
--
--
--
--
--
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:1.7
Page 2 of 10


Part Number SVF7N60CT
Description 600V N-CHANNEL MOSFET
Maker Silan Microelectronics
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SVF7N60CT Datasheet PDF






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