SVF7N65MJ Datasheet, Silan Microelectronics

* 7A, 650V, RDS(on)(typ.)=1.1Ω@VGS=10V
* Low gate charge
* Low Crss
* Fast switching
* Improved dv/dt capability TO-220F-3L TO-252-2L 12 3 12 3 T.

SVF7N65CF/D/MJ/K/S/FQ/T is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved process and cell structure have been especially tailored to minimiz.