SVF7N80T/F/KL_Datasheet
7A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N80T/F/KL is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM high-voltage planar VDMOS technology. The improved
process and cell structure have been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
7A,800V,RDS(on)(typ.)=1.39@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
2
1
3
1.Gate 2.Drain 3.Source
123
TO-220F-3L
123
TO-262L-3L
123
TO-220-3L
Silan VDMOS Code
of F-Cell process
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A,
10 denotes 10A,
08 denotes 0.8A
N denotes N Channel
ORDERING INFORMATION
Part No.
SVF7N80T
SVF7N80F
SVF7N80KL
Package
TO-220-3L
TO-220F-3L
TO-262L-3L
Package information.
Example:T:TO-220;
F:TO-220F;KL:TO-262L.
Nominal Voltage,using 2 digits
Example: 60 denotes 600V,
65 denotes 650V.
Special Features indication, May be omitted.
Example: E denotes embeded ESD structure
Marking
SVF7N80T
SVF7N80F
SVF7N80KL
Hazardous
Substance Control
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.6
Page 1 of 10
