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Silan Microelectronics

SVF7N80KL Datasheet Preview

SVF7N80KL Datasheet

800V N-CHANNEL MOSFET

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SVF7N80T/F/KL_Datasheet
7A, 800V N-CHANNEL MOSFET
GENERAL DESCRIPTION
SVF7N80T/F/KL is an N-channel enhancement mode power MOS
field effect transistor which is produced using Silan proprietary
F-CellTM high-voltage planar VDMOS technology. The improved
process and cell structure have been especially tailored to minimize
on-state resistance, provide superior switching performance, and
withstand high energy pulse in the avalanche and commutation
mode.
These devices are widely used in AC-DC power supplies, DC-DC
converters and H-bridge PWM motor drivers.
FEATURES
7A,800V,RDS(on)(typ.)=1.39@VGS=10V
Low gate charge
Low Crss
Fast switching
Improved dv/dt capability
NOMENCLATURE
2
1
3
1.Gate 2.Drain 3.Source
123
TO-220F-3L
123
TO-262L-3L
123
TO-220-3L
Silan VDMOS Code
of F-Cell process
Nominal current,using 1 or 2 digits:
Example:4 denotes 4A,
10 denotes 10A,
08 denotes 0.8A
N denotes N Channel
ORDERING INFORMATION
Part No.
SVF7N80T
SVF7N80F
SVF7N80KL
Package
TO-220-3L
TO-220F-3L
TO-262L-3L
Package information.
Example:T:TO-220;
F:TO-220F;KL:TO-262L.
Nominal Voltage,using 2 digits
Example: 60 denotes 600V,
65 denotes 650V.
Special Features indication, May be omitted.
Example: E denotes embeded ESD structure
Marking
SVF7N80T
SVF7N80F
SVF7N80KL
Hazardous
Substance Control
Pb free
Pb free
Pb free
Packing
Tube
Tube
Tube
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.6
Page 1 of 10




Silan Microelectronics

SVF7N80KL Datasheet Preview

SVF7N80KL Datasheet

800V N-CHANNEL MOSFET

No Preview Available !

SVF7N80T/F/KL_Datasheet
ABSOLUTE MAXIMUM RATINGS (TC=25C unless otherwise noted)
Characteristics
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Drain Current Pulsed
TC=25C
TC=100C
Power Dissipation(TC=25C)
-Derate above 25C
Single Pulsed Avalanche Energy(Note 1)
Operation Junction Temperature Range
Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
PD
EAS
TJ
Tstg
SVF7N80T
154
1.23
Ratings
SVF7N80F
800
±30
7.0
4.4
28.0
50
0.40
534
-55+150
-55+150
SVF7N80KL
150
1.20
THERMAL CHARACTERISTICS
Characteristics
Symbol
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJC
RθJA
SVF7N80T
0.81
62.5
Ratings
SVF7N80F
2.50
62.5
SVF7N80KL
0.83
62.5
ELECTRICAL CHARACTERISTICS (Tc=25C unless otherwise noted)
Characteristics
Drain -Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate Threshold Voltage
Static Drain- Source
On State Resistance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Turn-on Rise Time
Turn-off Delay Time
Turn-off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Test conditions
VGS=0V, ID=250µA
VDS=800V, VGS=0V
VGS=±30V, VDS=0V
VGS= VDS, ID=250µA
RDS(on) VGS=10V, ID=3.5A
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
VDS=25V, VGS=0V,
f=1.0MHz
VDD=400V, RG=25,
ID=7.0A
(Note 2,3)
VDS=640V, ID=7.0A,
VGS=10V
(Note 2,3)
Min.
800
--
--
2.0
--
---
--
--
--
--
--
--
--
--
--
Typ.
--
--
--
--
1.4
1087
104
5.7
34
72
63
35
23
7.0
9.0
Max.
--
1.0
±100
4.0
1.6
---
--
--
--
--
--
--
--
--
--
Unit
V
V
A
A
W
W/C
mJ
C
C
Unit
C/W
C/W
Unit
V
µA
nA
V
pF
ns
nC
HANGZHOU SILAN MICROELECTRONICS CO.,LTD
http: //www.silan.com.cn
Rev.:2.6
Page 2 of 10


Part Number SVF7N80KL
Description 800V N-CHANNEL MOSFET
Maker Silan Microelectronics
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