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SVFP7N65CDTR - 650V N-CHANNEL MOSFET

Download the SVFP7N65CDTR datasheet PDF. This datasheet also covers the SVFP7N65CFJD variant, as both devices belong to the same 650v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

SVFP7N65CFJD/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology.

Features

  • 7A, 650V, RDS(on)(typ. )=1.1@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVFP7N65CFJD-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVFP7N65CDTR
Manufacturer Silan Microelectronics
File Size 386.93 KB
Description 650V N-CHANNEL MOSFET
Datasheet download datasheet SVFP7N65CDTR Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVFP7N65CD 650V N-CHANNEL MOSFET
SVFP7N65CFJD 650V N-CHANNEL MOSFET
SVFP7N65CMJ 650V N-CHANNEL MOSFET
SVFP7N65CMJ 650V N-CHANNEL MOSFET
SVFP10N60CAFJ 600V N-CHANNEL MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVFP7N65CFJD/D/MJ_Datasheet 7A, 650V N-CHANNEL MOSFET GENERAL DESCRIPTION SVFP7N65CFJD/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are widely used in AC-DC power supplies, DC-DC converters and H-bridge PWM motor drivers. FEATURES  7A, 650V, RDS(on)(typ.)=1.1@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability NOMENCLATURE 2 1 123 3 TO-251J-3L 1.Gate 2.Dratin 3.
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