SVFP7N65CFJD
Description
SVFP7N65CFJD/D/MJ is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM high-voltage planar VDMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.
Key Features
- Example: MJ:TO-251J
- Nominal Voltage,using 2 digits Example: 60 denotes 600V
