SVS11N60FJD2 Datasheet, Silan Microelectronics

SVS11N60FJD2 transistor equivalent, 600v dp mos power transistor.

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Features and benefits

* 11A,600V, RDS(on)(typ.)=0.3@VGS=10V
* New revolutionary high voltage technology
* Ultra low gate charge
* Periodic avalanche rated
* Extreme dv/dt .

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MOS

Silan Microelectronics

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