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SVSP7N60FE2 - 600V DP MOS POWER TRANSISTOR

Description

SVSP7N60F(D)E2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior.

Features

  • 7A,600V, RDS(on)(typ. )=0.48@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Enhanced avalanche capability.
  • Extreme dv/dt rated.
  • High peak current capability.

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Datasheet Details

Part number SVSP7N60FE2
Manufacturer Silan Microelectronics
File Size 328.87 KB
Description 600V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVSP7N60FE2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SVSP7N60F(D)E2_Datasheet 7A, 600V DP MOS POWER TRANSISTOR DESCRIPTION SVSP7N60F(D)E2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, for example, it is suitable for hard and soft switching topologies. FEATURES  7A,600V, RDS(on)(typ.)=0.48@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Enhanced avalanche capability  Extreme dv/dt rated  High peak current capability NOMENCLATURE 2 1 3 1.Gate 2.Drain 3.
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