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SVSP7N70FD2 - 700V DP MOS POWER TRANSISTOR

Description

SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 7A, 700V, RDS(on)(typ. )=0.52@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.

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Datasheet Details

Part number SVSP7N70FD2
Manufacturer Silan Microelectronics
File Size 398.90 KB
Description 700V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVSP7N70FD2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Silan Microelectronics SVSP7N70F(D)(S)(FJD)D2_Datasheet 7A, 700V DP MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  7A, 700V, RDS(on)(typ.)=0.52@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability NOMENCLATURE 1 3 1.Gate 2.Drain 3.
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