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SVSP7N70FJDD2 - 700V DP MOS POWER TRANSISTOR

Download the SVSP7N70FJDD2 datasheet PDF. This datasheet also covers the SVSP7N70FD2 variant, as both devices belong to the same 700v dp mos power transistor family and are provided as variant models within a single manufacturer datasheet.

Description

SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology.

It achieves low conduction loss and switching losses.

Features

  • 7A, 700V, RDS(on)(typ. )=0.52@VGS=10V.
  • New revolutionary high voltage technology.
  • Ultra low gate charge.
  • Periodic avalanche rated.
  • Extreme dv/dt rated.
  • High peak current capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVSP7N70FD2-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVSP7N70FJDD2
Manufacturer Silan Microelectronics
File Size 398.90 KB
Description 700V DP MOS POWER TRANSISTOR
Datasheet download datasheet SVSP7N70FJDD2 Datasheet

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Other Datasheets by Silan Microelectronics

Part Number Description
SVSP7N70FD2 700V DP MOS POWER TRANSISTOR
SVSP7N70SD2 700V DP MOS POWER TRANSISTOR
SVSP7N60DD2 600V SUPER JUNCTION MOS POWER TRANSISTOR
SVSP7N60DE2TR 600V DP MOS POWER TRANSISTOR
SVSP7N60FD2 600V SUPER JUNCTION MOS POWER TRANSISTOR

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Silan Microelectronics SVSP7N70F(D)(S)(FJD)D2_Datasheet 7A, 700V DP MOS POWER TRANSISTOR DESCRIPTION 2 SVSP7N70F(D)(S)(FJD)D2 is an N-channel enhancement mode high voltage power MOSFETs produced using Silan’s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Furthermore, it’s universal applicable, i.e., suitable for hard and soft switching topologies. FEATURES  7A, 700V, RDS(on)(typ.)=0.52@VGS=10V  New revolutionary high voltage technology  Ultra low gate charge  Periodic avalanche rated  Extreme dv/dt rated  High peak current capability NOMENCLATURE 1 3 1.Gate 2.Drain 3.
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