SVT043R0NL5
Description
is an N-channel enhancement mode power MOS S2 7D field effect transistor which is produced using Silan's LVMOS 1 S3 6D technology.
Key Features
- 180A, 40V, RDS(on)(typ.)=2.6m@VGS=10V Low gate charge Low Crss Fast switching Improved dv/dt capability
