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SVT13N06DTR - 60V N-CHANNEL MOSFET

Download the SVT13N06DTR datasheet PDF. This datasheet also covers the SVT13N06SA variant, as both devices belong to the same 60v n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The SVT13N06SA(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology.

The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance.

Features

  • 13A,60V,RDS(on)(typ. )=9m@VGS=10V.
  • Low gate charge.
  • Low Crss.
  • Fast switching.
  • Improved dv/dt capability.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (SVT13N06SA-SilanMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number SVT13N06DTR
Manufacturer Silan Microelectronics
File Size 401.02 KB
Description 60V N-CHANNEL MOSFET
Datasheet download datasheet SVT13N06DTR Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SVT13N06SA(D)_Datasheet 13A, 60V N-CHANNEL MOSFET DESCRIPTION The SVT13N06SA(D) is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan's LVMOS technology. The improved process and cell structure have been especially tailored to minimize on-state resistance, provide superior switching performance. This device is widely used in UPS, DC-DC converters, synchronous rectifier and switch. FEATURES  13A,60V,RDS(on)(typ.)=9m@VGS=10V  Low gate charge  Low Crss  Fast switching  Improved dv/dt capability ORDERING INFORMATION Part No. SVT13N06SA SVT13N06SATR SVT13N06DTR Package SOP-8-225-1.27 SOP-8-225-1.
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