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2SB166100MA - LOW IR SCHOTTKY BARRIER DIODE CHIPS

This page provides the datasheet information for the 2SB166100MA, a member of the 2SB166100MA_SilanMicroelectronicsJoint LOW IR SCHOTTKY BARRIER DIODE CHIPS family.

Description

Ø Ø 2SB166100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperature; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction fo

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Datasheet Details

Part number 2SB166100MA
Manufacturer Silan Microelectronics Joint-stock
File Size 41.00 KB
Description LOW IR SCHOTTKY BARRIER DIODE CHIPS
Datasheet download datasheet 2SB166100MA Datasheet
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www.DataSheet4U.com 2SB166100MA 2SB166100MA LOW IR SCHOTTKY BARRIER DIODE CHIPS DESCRIPTION Ø Ø 2SB166100MA is a schottky barrier diode chips Lb Due to special schottky barrier structure, the chips have very low reverse leakage current ( typical IR=0.002mA@ Vr=100V ) and maximum 150°C operation junction temperature; Ø Ø Ø Ø Ø Low power losses, high efficiency; Guard ring construction for transient protection; High ESD capability; High surge capability; Packaged products are widely used in switching power suppliers, polarity protection circuits and other electronic circuits; Ø Chip Size: 1660µm X 1660µm; Chip Thickness: 280±20µm; Have two top side electrode materials for customer to choose, detail refer to ordering specifications.
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