Download the SBT103AD datasheet PDF.
This datasheet also covers the SBT103AD_Silicon variant, as both devices belong to the same small signal schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.
Features
- and Advantages:
Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability
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Symbol
VFM
Electrical Characteristics : (@TA=25°C unless otherwise specified)
Characteristic
Reverse Breakdown Voltage SBT103AD SBT103BD SBT103CD
Min. 40 30 20
Typ. -
Max. -
Unit
V
Test Conditions
IRS=100µA
Maximum Forward Voltage Drop Maximum Peak Reverse Current SBT103AD SBT103B.