Download the SBT103AT datasheet PDF.
This datasheet also covers the SBT103AT_Silicon variant, as both devices belong to the same small signal schottky barrier diodes family and are provided as variant models within a single manufacturer datasheet.
Features
- and Advantages:
Low forward voltage drop(VF) Low reverse leakage current (IR) Very small conduction power loss Very small switching power loss Very high switching speed Very high reliability
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Symbol Min. Typ. Max. Unit
V(BR)R 40 0.35 V
Electrical Characteristics : (@TA=25°C unless otherwise specified)
Characteristic
Reverse Breakdown Voltage (Note 2) Forward Voltage (Note 2)
Test Conditions
IR=100µA IF=20mA
VF IR CT trr
-
-
0.45 0.50 5.0 -
mV
IF=100mA IF=200mA VR=30V.