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SG4953S Datasheet Preview

SG4953S Datasheet

-30V Dual P-Channel Power MOSFET

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VDSS , -30V
RDS(ON) , 60m(max.) @ VGS=-10V
RDS(ON) , 90m(max.) @ VGS=-4.5V
ID , -5A
SOP-8
SG4953S
-30V Dual P-Channel Power MOSFET
Description
The SG4953S is the highest performance trench P-Ch
MOSFETs with extreme high cell density, which provide
excellent RDSON and gate charge for most of the synchronous
buck converter applications.
The SG4953S meet the RoHS and Green Product requirement,
100% EAS guaranteed with full function reliability approved.
Features
Low On-Resistance
Low Input Capacitance
Low Miller Charge
Low Input/Output Leakage
Applications
Motor / Body Load Control
Automotive Systems
Load Switch
DC-DC converters and Off-line UPS
Ordering Information
Ordering Code
SG4953S
RoHS Status
Halogen-Free
Package
SOP-8
Package Code
S
Packing
Tape & Reel
Quantity
2,500
Absolute Maximum Ratings (T =25°C unless otherwise noted)A
www.DataSheet.net/
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
TC=25°C
TC=70°C
Drain Current-Pulsed Note 1
Drain Current-Continuous
TA=25°C
TA=70°C
Avalanche Current, L=0.1mH
Avalanche Energy, L=0.1mH
TC=25°C
Maximum Power Dissipation
TC=70°C
TA=25°C
TA=70°C
Storage Temperature Range
Operating Junction Temperature Range
Symbol
VDS
VGS
ID
IDM
ID
IAS
EAS
PD
TSTG
TJ
Value
-30
±20
-5
-3.9
-20
-4.2
-3.3
-15
11.25
2.1
1.3
1.5
0.9
-55 to +150
-55 to +150
Unit
V
V
A
A
A
A
A
A
mJ
W
W
W
W
°C
°C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambient Note 2
Maximum Junction-to-Case Note 2
Symbol
RθJA
RθJC
Conditions
Steady State
Steady State
Min. Typ. Max. Unit
- - 85 °C/W
- - 60 °C/W
DS-SG4953S-04
PAGE: 1
SiliconGear Corporation www.SiliconGear.com
Datasheet pdf - http://www.DataSheet4U.co.kr/




SiliconGear

SG4953S Datasheet Preview

SG4953S Datasheet

-30V Dual P-Channel Power MOSFET

No Preview Available !

SG4953S
-30V Dual P-Channel Power MOSFET
Electrical Characteristics (TJ=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Symbol
Conditions
Drain-Source Breakdown Voltage
BVDSS VGS=0V, IDS=-250μA
Zero Gate Voltage Drain Current
IDSS VDS=-24V, VGS=0V
Gate-Body Leakage
IGSS VGS=±20V, VDS=0V
Min. Typ. Max. Unit
-30 -
-V
- - -1 μA
- - ±100 nA
ON CHARACTERISTICS
Parameter
Gate Threshold Voltage
Drain-Source On-State Resistance
Symbol
VGS(TH)
RDS(ON)
Conditions
VDS=VGS, IDS=-250μA
VGS=-10V, IDS=-5A
VGS=-4.5V, IDS=-4A
Min. Typ. Max. Unit
-1 - -3 V
-
-
45
66
60
90
m
DYNAMIC CHARACTERISTICS
Parameter
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Symbol
Conditions
Min. Typ. Max. Unit
Ciss - 680 -
Coss VDS=-15V, VGS=0V, f=1MHz - 290 - pF
Crss - 120 -
SWITCHING CHARACTERISTICS
Parameter
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at -4.5V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Symbol
Td(on)
tr
Td(off)
tf
Qg
Qgs
Qgd
Conditions
V =-15V, V =-10V,DD
www.DataSheet.net/
GS
RG=3.3, ID=-5A
VDS=-15V, VGS=-4.5V,
ID=-5A
Min. Typ. Max. Unit
- 10 -
-
-
17
22
-
-
ns
- 21 -
- 6.5 -
- 2.8 - nC
-3-
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
Parameter
Symbol
Conditions
Min. Typ. Max. Unit
Drain-Source Diode Forward Voltage
VSD VGS=0V, IS=-5A
- - -1.3 V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
trr
Qrr
IF=-5A, dl/dt=100A/μs
- 12 - ns
- 3.5 - nC
Notes:
1. Pulse Test: Pulse Width 300μs, Duty Cycle 2%.
2. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the
solder mounting surface of the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design. RθJA
shown below for single device operation on FR-4 in still air.
DS-SG4953S-04
PAGE: 2
SiliconGear Corporation www.SiliconGear.com
Datasheet pdf - http://www.DataSheet4U.co.kr/


Part Number SG4953S
Description -30V Dual P-Channel Power MOSFET
Maker SiliconGear
Total Page 7 Pages
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