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SM7331-BCE-S-001-000 Datasheet Preview

SM7331-BCE-S-001-000 Datasheet

Differential Pressure Sensor

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Low Pressure Digital Sensor
SM7331-BCE-S-001-000
Differential Pressure Sensor
FEATURES
Pressure range from -1 to 1 kPa; differential output
1.0%FS accuracy
16-bit digital, pressure calibrated and temperature compensated
output
I2C Digital Interface
Compensated temperature range: -20 to 85oC
Robust JEDEC SOIC-16 package for automated assembly
Manufactured according to ISO9001 and ISO/TS 16949 standards
DESCRIPTION
The SM7331 is a digital, ultra-low pressure MEMS sensor offering
state-of-the-art pressure transducer technology and CMOS mixed
signal processing technology to produce a digital, fully conditioned,
multi-order pressure and temperature compensated sensor in JEDEC
standard SOIC-16 package with a dual vertical porting option. It is
available in a differential pressure configuration.
Combining the pressure sensor with a signal-conditioning ASIC in a
single package simplifies the use of advanced silicon micro-machined
pressure sensors. The pressure sensor can be mounted directly on a
standard printed circuit board and a high level, calibrated pressure
signal can be acquired from the digital interface. This eliminates the
need for additional circuitry, such as a compensation network or
microcontroller containing a custom correction algorithm.
The SM7331 is shipped in sticks or tape & reel.
Medical
Sleep Apnea
CPAP
Ventilators
Gas Flow Instrumentation
Air Flow Monitors
Silicon Microstructures, Inc. 2001-2018. All rights reserved
DOC # 40DS7331.00
Industrial
Airflow Measurement
Pneumatic Gauges
Pressure Switches
Safety Cabinets
Life Sciences
Gas Flow Instrumentation
HVAC
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com
Page 1




Silicon Microstructures

SM7331-BCE-S-001-000 Datasheet Preview

SM7331-BCE-S-001-000 Datasheet

Differential Pressure Sensor

No Preview Available !

SM7331-BCE-S-001-000
www.si-micro.com
1. Absolute Maximum Ratings
All parameters are specified at Vdd = 3.3 V supply voltage at 25oC, unless otherwise noted.
No.
Characteristic
Symbol Minimum Typical
1
Supply Voltage
VDD
3.0
2
Supply Current
IVDD
3.2
3
Compensated Temperature(b)
TCOMP
-20
4
Operating Temperature(a)
TOP
-40
5
Storage Temperature(a)
TSTG
-40
6
Proof Pressure(a, c)
PProof
7
Burst Pressure(a, d)
PBurst
Maximum
5.5
+85
+105
+125
+/-10
+/-20
Units
V
mA
°C
°C
°C
kPa
kPa
Notes:
a. Tested on a sample basis.
b. Clean, dry gas compatible with wetted materials. Wetted materials include silicon, epoxy, RTV (silicon), gold, aluminum and mold compound.
c. Proof pressure is defined as the maximum pressure to which the device can be taken and still perform within specifications after returning to
the operating pressure range
d. Burst pressure is the pressure at which the device suffers catastrophic failure resulting in pressure loss through the device.
2. ESD
No.
Description
2.1
ESD HBM Protection at all Pins
3. External Components
No.
Description
1
Supply bypass capacitor*
2
I2C Data and clock pull up resistors*
Symbol
VESD(HBM)
Symbol
CVDD
RP
Minimum
-2
Maximum
2
Min.
Typ.
Max.
100
4.7
Units
kV
Units
nF
kOhm
Silicon Microstructures, Inc. 2001-2018. All rights reserved
DOC # 40DS7331.00
+1-(408) 577-0100 | sales@si-micro.com I www.si-micro.com
Page 2



Part Number SM7331-BCE-S-001-000
Description Differential Pressure Sensor
Maker Silicon Microstructures
Total Page 3 Pages
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