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SSM2302N Datasheet N-channel Enhancement-mode Power MOSFET

Manufacturer: Silicon Standard

Datasheet Details

Part number SSM2302N
Manufacturer Silicon Standard
File Size 135.19 KB
Description N-channel Enhancement-mode Power MOSFET
Download SSM2302N Download (PDF)

General Description

D SOT-23 G S Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness.

BV DSS RDS(ON) ID 20V 85mΩ 2.8A D Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Current3, VGS @ 4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 G S Rating 20 ± 12 2.8 2.2 10 1.25 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max.

Value 100 Unit °C/W Rev.2.02 3/12/2004 www.SiliconStandard.com 1 of 6 SSM2302N Electrical Characteristics @ Tj=25oC (unles

Overview

SSM2302N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.