Datasheet4U Logo Datasheet4U.com

SSM2305AGN Datasheet P-channel Enhancement-mode Power MOSFET

Manufacturer: Silicon Standard

Datasheet Details

Part number SSM2305AGN
Manufacturer Silicon Standard
File Size 302.21 KB
Description P-channel Enhancement-mode Power MOSFET
Download SSM2305AGN Download (PDF)

General Description

D G S BV DSS R DS(ON) ID D The SSM2305AGN is in a SOT-23-3 package, which is widely used for lower power commercial and industrial surface mount applications.

This device is suitable for low-voltage applications such as DC/DC converters and and general switching applications.

SOT-23-3 -30V 80mΩ -3.2A S G ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range THERMAL DATA Symbol RΘJA Parameter Maximum Thermal Resistance, Junction-ambient3 Rating -30 ± 12 -3.2 -2.6 -10 1.38 0.01 -55 to 150 -55 to 150 Value 90 Units V V A A A W W/°C °C °C Unit °C/W 2/1

Overview

SSM2305AGN P-channel Enhancement-mode Power MOSFET Low gate-charge Simple drive requirement Fast switching Pb-free; RoHS compliant.