Datasheet Details
| Part number | SSM2306N |
|---|---|
| Manufacturer | Silicon Standard |
| File Size | 141.90 KB |
| Description | N-channel Enhancement-mode Power MOSFET |
| Download | SSM2306N Download (PDF) |
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| Part number | SSM2306N |
|---|---|
| Manufacturer | Silicon Standard |
| File Size | 141.90 KB |
| Description | N-channel Enhancement-mode Power MOSFET |
| Download | SSM2306N Download (PDF) |
|
|
|
D SOT-23 G S BVDSS RDS(ON) ID Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device.
The SOT-23 package is widely used for commercial and industrial applications.
G 20V 32mΩ 5.3A D S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM PD @ TA=25°C Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1,2 Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 20 ± 12 5.3 4.3 10 1.38 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Max.
SSM2306N N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
SSM2306 | Class-D Stereo Audio Amplifier | Analog Devices |
| Part Number | Description |
|---|---|
| SSM2302N | N-channel Enhancement-mode Power MOSFET |
| SSM2304AGN | N-channel Enhancement-mode Power MOSFET |
| SSM2304N | N-channel Enhancement-mode Power MOSFET |
| SSM2305AGN | P-channel Enhancement-mode Power MOSFET |
| SSM2305GN | P-channel Enhancement-mode Power MOSFET |
| SSM2307GN | P-channel Enhancement-mode Power MOSFET |
| SSM2309GN | P-channel Enhancement-mode Power MOSFET |
| SSM2310GN | N-channel Enhancement-mode Power MOSFET |
| SSM2312GN | N-channel Enhancement-mode Power MOSFET |
| SSM2313GN | P-channel Enhancement-mode Power MOSFET |