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SSM2602Y Datasheet N-CHANNEL ENHANCEMENT-MODE POWER MOSFET

Manufacturer: Silicon Standard

Datasheet Details

Part number SSM2602Y
Manufacturer Silicon Standard
File Size 162.90 KB
Description N-CHANNEL ENHANCEMENT-MODE POWER MOSFET
Download SSM2602Y Download (PDF)

General Description

S D D G SOT-26 D D These Power MOSFETs from Silicon Standard utilize advanced processing techniques to achieve the lowest possible on-resistance in an extremely efficient and cost-effective device.

The SOT-26 package is widely used for commercial and industrial surface-mount applications.

BV DSS R DS(ON) ID 20V 34mΩ 5.3A D G S Absolute Maximum Ratings Symbol Parameter VDS VGS ID @ TA=25°C ID @ TA=70°C IDM Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3, VGS @ 4.5V Continuous Drain Current3, VGS @ 4.5V Pulsed Drain Current1,2 PD @ TA=25°C Total Power Dissipation Linear Derating Factor TSTG TJ Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient3 Rating 20 ± 12 5.3 4.3 10 1.56 0.01 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °

Overview

SSM2602Y N-CHANNEL ENHANCEMENT-MODE POWER MOSFET Capable of 2.