SSM9567GM Datasheet | Silicon Standard

DESCRIPTION The SSM9567GM acheives fast switching performance with low gate charge without a plex drive circuit. It is suitable for low voltage applications such as DC/DC converters and general load-switching circuits. The SSM9567GM is supplied in an Ro HS-pliant SO-8 package, which is widely used for medium power mercial and industrial surface mount applications. -40V 50mΩ -6A Pb-free; Ro HS-pliant SO-8 D D D D G SO-8 ABSOLUTE MAXIMUM RATINGS Symbol VDS VGS ID IDM PD TSTG TJ Parameter Drain-source voltage Gate-source voltage Continuous drain current, TC = 25°C TC = 70°C Pulsed drain current Value -40 ±25 -6 -4.8 -30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/°C °C °C Total power dissipation, TC = 25°C Linear derating factor Storage temperature range Operating junction temperature range THERMAL CHARACTERISTICS Symbol RΘ JA Parameter Maximum thermal resistance, junction-ambient Value Units °C/W Notes: 1.Pulse width must be limited to avoid exceeding the maximum junction temperature of 150°C. 2.Pulse width <300us, duty cycle <2%. 3.Mounted on a square inch of copper pad on FR4 board; 125°C/W when mounted on the minimum pad area required for soldering. 9/27/2006 Rev.3.01 .Silicon Standard. 1 of 5 ELECTRICAL CHARACTERISTICS Symbol BVDSS Parameter Drain-source breakdown voltage Breakdown voltage temperature coefficient (at Tj = 25°C, unless otherwise specified) Test Conditions VGS=0V, ID=-250u A Reference to 25°C, ID=-1m A VGS=-10V, ID=-6A VGS=-4.5V, ID=-4A Min. -40 -1 - Typ. -0.03 9 11 3 5 10 5 30 6 880 135 110 Max. Units 50 80 -3 -1 -25 ±100 18 1400 8 V V/°C mΩ mΩ V S u A u A n A n C n C n C ns ns ns ns p F p F p F Ω ∆ BV DSS/∆...