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Silicon Storage Technology

SST12LP14C Datasheet Preview

SST12LP14C Datasheet

High-Gain Power Amplifier

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2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14C
FEATURES:
SST-GP1214A2.4 GHz High Gain High Power PA
Preliminary Specifications
• High Gain:
– Typically 32 dB gain across 2.4~2.5 GHz over
temperature 0°C to +85°C
• High linear output power:
– >26 dBm P1dB
- Please refer to “Absolute Maximum Stress
Ratings” on page 4
– Meets 802.11g OFDM ACPR requirement up to
23 dBm
– ~4% added EVM up to 20 dBm for 54 Mbps
802.11g signal
– Meets 802.11b ACPR requirement up to 22.5
dBm
• High power-added efficiency/Low operating
current for both 802.11b/g applications
– ~29%/205 mA @ POUT = 23 dBm for 802.11g
– ~27%/195 mA @ POUT = 22.5 dBm for 802.11b
• Single-pin low IREF power-up/-down control
– IREF <2 mA
• Low idle current
– ~100 mA ICQ
• High-speed power-up/-down
– Turn on/off time (10%- 90%) <100 ns
– Typical power-up/-down delay with driver delay
included <200 ns
• High temperature stability
– ~1 dB power variation between 0°C to +85°C
• Low shut-down current (< 0.1 µA)
• Excellent On-chip power detection
– <+/- 0.5dB variation between 0°C to +85°C
– <+/- 0.3dB variation Ch1 through Ch14
• 20 dB dynamic range on-chip power detection
• Simple input/output matching
• Packages available
– 16-contact VQFN – 3mm x 3mm
• All non-Pb (lead-free) devices are RoHS compliant
APPLICATIONS:
• WLAN (IEEE 802.11b/g)
• Home RF
• Cordless phones
• 2.4 GHz ISM wireless equipment
PRODUCT DESCRIPTION
The SST12LP14C is a versatile power amplifier based on
the highly-reliable InGaP/GaAs HBT technology.
The SST12LP14C can be easily configured for high-power
applications with good power-added efficiency (PAE) while
operating over the 2.4- 2.5 GHz frequency band. It typically
provides 32 dB gain with 29% PAE @ POUT = 23 dBm for
802.11g and 27% power-added efficiency @ POUT = 22.5
dBm for 802.11b.
This power amplifier has excellent linearity, typically ~4%
added EVM at 20 dBm output power. This is essential for
54 Mbps 802.11g operation while meeting 802.11g spec-
trum mask up to 23 dBm.
The SST12LP14C also features easy board-level usage
along with high-speed power-up/-down control through a
single combined reference voltage pin. Ultra-low reference
current (total IREF ~2 mA) makes the SST12LP14C control-
lable by an on/off switching signal directly from the base-
band chip. These features coupled with low operating
current make the this device ideal for the final stage power
amplification in battery-powered 802.11b/g WLAN transmit-
ter applications.
This power amplifier has an excellent on-chip and single-
ended power detector, which features a wide range
(>15 dB) with dB-wise linearization and high stability over
temperature (+/-0.5 dB 0°C to +85°C), and over frequency
(<+/-0.3 dB across Channels 1 through 14). The on-chip
power detector provides a reliable solution to board-level
power control.
The SST12LP14C is offered in 16-contact VQFN package.
See Figure 2 for pin assignments and Table 1 for pin
descriptions.
©2007 Silicon Storage Technology, Inc.
S71353-00-000
02/07
1
The SST logo and SuperFlash are registered Trademarks of Silicon Storage Technology, Inc.
These specifications are subject to change without notice.




Silicon Storage Technology

SST12LP14C Datasheet Preview

SST12LP14C Datasheet

High-Gain Power Amplifier

No Preview Available !

Preliminary Specifications
FUNCTIONAL BLOCKS
2.4 GHz High-Power, High-Gain Power Amplifier
SST12LP14C
16 15 14 13
NC 1
12 VCC2
RFIN 2
11 RFOUT
RFIN 3
NC 4
Bias Circuit
56 7
10 RFOUT
9 Det
8
1353 B1.1
FIGURE 1: Functional Block Diagram
©2007 Silicon Storage Technology, Inc.
2
S71353-00-000
02/07


Part Number SST12LP14C
Description High-Gain Power Amplifier
Maker Silicon Storage Technology
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SST12LP14C Datasheet PDF






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