Datasheet Details
| Part number | SST12LP14C |
|---|---|
| Manufacturer | Silicon Storage Technology |
| File Size | 573.27 KB |
| Description | High-Gain Power Amplifier |
| Datasheet |
 SST12LP14C Datasheet
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General Description
The SST12LP14C is a versatile power amplifier based on the highly-reliable InGaP/GaAs HBT technology.
The SST12LP14C can be easily configured for high-power applications with good power-added efficiency (PAE) while operating over the 2.4- 2.5 GHz frequency band.
Key Features
- High Gain:.
- Typically 32 dB gain across 2.4~2.5 GHz over temperature 0°C to +85°C High linear output power:.
- >26 dBm P1dB - Please refer to “Absolute Maximum Stress Ratings” on page 4.
- Meets 802.11g OFDM ACPR requirement up to 23 dBm.
- ~4% added EVM up to 20 dBm for 54 Mbps 802.11g signal.
- Meets 802.11b ACPR requirement up to 22.5 dBm High power-added efficiency/Low operating current for both 802.11b/g.