| Description | p-cha.,.nel JFETs designed for • • • • Small-Siglllal Amplifiers H Performance Curves PC PD See Section 4 BENEFITS • Low Supply Voltage Operation V GS(off) Typically 1.2 V *ABSOLUTE MAXIMUM RATINGS (25°C) Gate-Drain and Gate-Source Voltage (Note 3) .. 30V Gate Current, Forwal"d Biased (Note 1) ..... 50mA Total Device Dissipation (Derate 2mW/oC) . 300 mW Storage Temperature Rang... |
| Features |
1.7 V VOS ~ -5 V, 10 ~ -1 pA
-440 -2200 /lA VDS~-5V, VGS~O
1400
Jimho VOS~-5V,VGS~0
30 pF 3 dB
VDS~-5V, VGS~ 1 V VOS ~ -5 V. VGS - 0, RG ~ 1M Q
PC
PO
*JEDEC Registered Data
NOTES: 1. Not JEOEC Registered 2. IGSS is JEDEC Registered at VGS =;0 5 V. 3. Due to symmetrical geometry, these units may be operated with source and drain leads inte...
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| Datasheet |
 2N2843 Datasheet 53.23KB |
