900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Siliconix

2N3921 Datasheet Preview

2N3921 Datasheet

monolithic dual n-channel JFET

No Preview Available !

monolithic dual
n-channel JFETs
designed for • •
DiHerential Amplifiers
H
Siliconix
Performance Curves NNR
See Section 4
BENEFITS
Minimum System Error and Calibra-
tion
5 mV Offset Maximum (2N3921)
Simplifies Amplifier Design
Low Output Conductance
TO-71
See Section 6
*ABSOLUTE MAXIMUM RATINGS (25°C)
Gate-Drain or Gate-Source Voltage ..............• -50 V
Gate Current ............................... 50 rnA
Total Device Dissipation
(Derate 1.7 mW;oC to 200°C) ..•............ 300mW
Storage Temperature Range •............. -65 to +200°C
~~G1 G2
81 S2
o'2 02
.,5 0
G, 0 3 6 0
27
0, 00'
G2
Bottom View
l~G.0, '•
*ELECTRICAL CHARACTERISTICS (25°C unless otherwise noted)
Characteristic
.2.
~2 s
4"T
-::-A
~:
-"b -c
...l...
8
IGSS
BVOGO
VGS(offl
VGS
IG
lOSS
9 9fs
100 gos
12":l1 V CISS
Crss
13M 9fs
1_4c1 gos
15 NF
Gate Reverse Current
Drain-Gate Breakdown Voltage
Gate-Source Cutoff Voltage
Gate-5ource Voltage
Gate Operatmg Current
Saturation Drain Current (Note 1)
Common-Source Forward Transconductance (Note 1)
Common-Source Output Conductance
Common-Source Input Capacitance
Common-Source Reverse Transfer Capacitance
Common-Source Forward Transconductance
Common-Source Output Conductance
Spot NOise Figure
Min
50
-0.2
1
1500
1500
Max
-1
-1
-3
-2.7
-250
-25
10
7500
35
18
6
20
2
Unit Test Conditions
nA
IVGS=-30V. VOS=O
IlA
100·C
10 = lilA. IS = 0
V VOS-l0V.10-lnA
VOS - 10V,I0 = lOOIlA
pA
VOG = 10V,I0 = 700ilA
nA 100·C
mA VOS = 10V, VGS = 0
"mho
pF
VOS=10V,VGS=1J
1= I kHz
Ilmho VOG = 10V.10 = 700llA 1 = 1 kHz
d8 VOS=10V,VGS 0
f= 1 kHz,
RG= 1 meg
Characteristic
-16
1- M
17 A
1-
T
C
18 H
IVGS1-VGS2 1' Differential Gate-Source Voltage
aIVGS1-VGS2 1 Gate-Source Differential Voltage
aT
Change with Temperature
(Note 21
91,1 Transconductance Ratio
gfs2 (Note 3)
2N3921
Min Max
5
10
0.95 1.0
2N3922
Min Max
5
25
0.95 1.0
2N4OB4
Min Max
15
10
0.95 1.0
2N4085
Min Max
15
Unit
mV
25 "vfc
0.95 1.0
-
Test Conditions
VOG=10V, TA= O·C
10 = 700llA TB = 100·C
f = I kHz
•JEOEC registered data.
NOTES:
1. Pulse test duration = 2 ms.
2. Measured at end points, TA and TB.
3. Assumes smaller value 10 numerator.
NNR
3-4 Siliconix


Part Number 2N3921
Description monolithic dual n-channel JFET
Maker Siliconix
Total Page 1 Pages
PDF Download

2N3921 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 2N3920 NPN Transistor
SSDI
2 2N3921 (2N3921 / 2N3922) MONOLITHIC DUAL N-CHANNEL JFET HENERAL PURPOSE AMPLIFIER
Calogic
3 2N3921 monolithic dual n-channel JFET
Siliconix
4 2N3922 (2N3921 / 2N3922) MONOLITHIC DUAL N-CHANNEL JFET HENERAL PURPOSE AMPLIFIER
Calogic
5 2N3922 monolithic dual n-channel JFET
Siliconix
6 2N3924 NPN silicon annular RF power transistors
Motorola
7 2N3924 (2N3924 - 2N3927) Silicon Epitaxial Planar Overlay Transistors
NXP
8 2N3924 UHF/VHF Power Transistors
ETC
9 2N3924 Trans GP BJT NPN 60V 10A 3-Pin(2+Tab) TO-3
New Jersey Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy